Texture Control in Thin Films Using Ion Bombardment
نویسندگان
چکیده
منابع مشابه
Growth mechanism of thin oxide films under low-energy oxygen-ion bombardment
Bombardment of silicon surfaces by low-energy oxygen ions has been investigated as a possible process for growing films ofSiOzat room temperature. Broad ion beams ofenergy 40-200 eV and variable oxygen content have been used to grow ultrathin oxides of extremely uniform thickness. The ion beam oxides are similar to thin thermal oxides in many respects-composition, chemical binding, optical, and...
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ژورنال
عنوان ژورنال: Textures and Microstructures
سال: 2000
ISSN: 0730-3300,1029-4961
DOI: 10.1155/tsm.34.105